发明名称 |
PATTERN FORMING METHOD, METHOD FOR MANUFACTURING MATRIX SUBSTRATE OF THIN FILM TRANSISTOR, AND LIGHT EXPOSURE MASK |
摘要 |
There is provided a patterning method which makes it possible to form a desired preferable pattern having no reduction in the pattern thickness in a boundary portion where a group of patterns are joined using a plurality of exposure masks. There is provided a patterning method for forming a group of patterns in which first patterns to serve as basic units are repetitively arranged using a plurality of exposure masks. When a third region sandwiched by a first region exposed with a first exposure mask and a second region exposed with a second exposure mask is exposed with the first and second exposure masks in a complementary manner, repetitive unit patterns for exposing the third region are different from the first patterns. |
申请公布号 |
KR100658123(B1) |
申请公布日期 |
2006.12.15 |
申请号 |
KR20010058015 |
申请日期 |
2001.09.19 |
申请人 |
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发明人 |
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分类号 |
G02F1/136;G02F1/1368;G03F1/08;G03F1/68;G03F1/70;G03F7/20;H01L21/027;H01L21/336;H01L29/786 |
主分类号 |
G02F1/136 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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