RECESSED TRANSISTORS REMOVING FENCE OF SEMICONDUCTOR SUBSTRATE ON SIDEWALL OF DEVICE ISOLATION LAYER AND METHODS OF FORMING THE SAME

摘要

A recessed transistors removing a fence of a semiconductor substrate on a sidewall of an isolation layer and a fabricating method thereof are provided to maximize current driving ability by removing the fence of the semiconductor substrate in a channel portion hole. An active region(24) is defined by an isolation layer(20) of a semiconductor substrate(10). A channel portion hole(46) is extended from an upper surface of the semiconductor substrate of the active region toward a lower portion of the semiconductor substrate with a predetermined depth. The isolation layer is arranged to isolate the semiconductor substrate of the active region surrounding the channel portion hole from a longitudinal direction of the active region. The isolation layer is arranged to expose at least one of side surfaces(S1,S2) of the semiconductor substrate of the active region in the channel portion hole from a width direction of the active region. A length(A) of the side surface is different from a length(B) of the other side surface connected to the isolation layer.