发明名称 SEMICONDUCTOR LASER DEVICE, AND MANUFACTURING METHOD AND JOINING METHOD OF SAME
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor laser device manufacturing method which can reduce a residual stress of a laser array. SOLUTION: A tensile stress St is produced by applying a tensile force Ft to a sub-mount 20. Then, the sub-mount 20 where the tensile stress St is produced and the laser array 10 are pressed through heating to be joined together. The difference between both amounts of thermal expansion due to the difference between the thermal expansion coefficients of the sub-mount 20 and laser array 10 is set off by the tensile stress St, and the amount of elongation of the sub-mount 20 becomes approximately equal to the amount of thermal expansion of the laser array 10. After being joined, the residual stress of the laser array 10 becomes almost zero when returning them to a room temperature. When directly locating the laser array 10 on the heat sink, the compression force is applied to the heat sink to join the heat sink, on which the compression stress is produced, and the laser array 10 together. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2006339511(A) 申请公布日期 2006.12.14
申请号 JP20050164165 申请日期 2005.06.03
申请人 SONY CORP 发明人 IMANISHI DAISUKE
分类号 H01S5/022 主分类号 H01S5/022
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