发明名称 PLASMA TREATMENT APPARATUS
摘要 <P>PROBLEM TO BE SOLVED: To provide a plasma treatment apparatus generating a plasma having high homogeneity and stability. <P>SOLUTION: This apparatus generating a plasma uses a &mu; wave for rotating the &mu; wave in terms of time, by using a plurality (from 2 to 4) of waveguides and by arranging the waveguides. Two waveguides are declined to give phase difference in an electric field, and a circularly polarized wave is introduced into a treatment chamber. At this time, an arranging method of waveguides and a means thereof, a merging chamber in which &mu; waves are merged, and a controlling means of a reflected wave using a reflection controlling chamber are provided. Thus, in a method for generating a plasma using a &mu; wave by providing a means for rotating a &mu; wave in a wide parameter region, a plasma treatment apparatus can be provided which can obtain a plasma having a high density and a high homogeneity in a wide process parameter region. As a result, a homogeneous processing of a wafer can be obtained having a large aperture with a high processing rate. <P>COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2006339547(A) 申请公布日期 2006.12.14
申请号 JP20050164947 申请日期 2005.06.06
申请人 HITACHI HIGH-TECHNOLOGIES CORP 发明人 KAZUMI HIDEYUKI;SANO AKIHIRO;MAKINO AKITAKA;TAMURA HITOSHI;SAKAGUCHI MASAMICHI
分类号 H01L21/3065;C23C16/511;H05H1/46 主分类号 H01L21/3065
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