发明名称 THIN FILM TRANSISTOR ARRAY PANEL AND MANUFACTURING METHOD THEREOF
摘要 A thin film transistor substrate and a method for manufacturing the same are provided to enable the omission of a photolithographic process for forming a pixel electrode, thereby simplifying the manufacturing process, by simultaneously forming a drain electrode and the pixel electrode. A gate line having a gate electrode(124) is formed on an insulating substrate(110). A gate insulating layer(140) is formed on the gate line. A semiconductor layer(154) and an ohmic contact pattern are formed on the gate insulating layer. A first transparent conductive layer and a first conductive layer are sequentially formed on the ohmic contact pattern and the gate insulating layer. The first conductive layer and the first transparent conductive layer are pattern-etched to form a data line and a first electrode pattern. The first electrode pattern is partially removed to expose a portion of the transparent conductive layer, thereby forming a pixel electrode(190) consisting of the first transparent conductive layer, and a drain electrode(175) consisting of the first transparent conductive layer and the first conductive layer. A passivation layer(180) is formed on the data line and the drain electrode.
申请公布号 KR20060125254(A) 申请公布日期 2006.12.06
申请号 KR20050047197 申请日期 2005.06.02
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LEE, EUN GUK;KIM, JANG SOO
分类号 G02F1/136 主分类号 G02F1/136
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