发明名称 |
THIN FILM TRANSISTOR ARRAY PANEL AND MANUFACTURING METHOD THEREOF |
摘要 |
A thin film transistor substrate and a method for manufacturing the same are provided to enable the omission of a photolithographic process for forming a pixel electrode, thereby simplifying the manufacturing process, by simultaneously forming a drain electrode and the pixel electrode. A gate line having a gate electrode(124) is formed on an insulating substrate(110). A gate insulating layer(140) is formed on the gate line. A semiconductor layer(154) and an ohmic contact pattern are formed on the gate insulating layer. A first transparent conductive layer and a first conductive layer are sequentially formed on the ohmic contact pattern and the gate insulating layer. The first conductive layer and the first transparent conductive layer are pattern-etched to form a data line and a first electrode pattern. The first electrode pattern is partially removed to expose a portion of the transparent conductive layer, thereby forming a pixel electrode(190) consisting of the first transparent conductive layer, and a drain electrode(175) consisting of the first transparent conductive layer and the first conductive layer. A passivation layer(180) is formed on the data line and the drain electrode. |
申请公布号 |
KR20060125254(A) |
申请公布日期 |
2006.12.06 |
申请号 |
KR20050047197 |
申请日期 |
2005.06.02 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE, EUN GUK;KIM, JANG SOO |
分类号 |
G02F1/136 |
主分类号 |
G02F1/136 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|