发明名称 |
Semiconductor device and method of manufacturing the same |
摘要 |
A semiconductor device comprises a semiconductor substrate, an interlayer insulating film including a first insulating film formed above the substrate and having a relative dielectric constant smaller than 2.5 and a second insulating film formed to cover the first insulating film and having a relative dielectric constant larger than that of the first insulating film, and a buried wiring formed within the interlayer insulating film. A bottom portion of the second insulating film is buried in the first insulating film at a number of points.
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申请公布号 |
US7144804(B2) |
申请公布日期 |
2006.12.05 |
申请号 |
US20040022644 |
申请日期 |
2004.12.28 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
MINAMIHABA GAKU;FUKUSHIMA DAI;TATEYAMA YOSHIKUNI;YANO HIROYUKI |
分类号 |
H01L21/4763;H01L21/768;H01L23/522;H01L23/532 |
主分类号 |
H01L21/4763 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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