| 摘要 |
PROBLEM TO BE SOLVED: To reduce the size of a chip in a semiconductor memory by reducing the area of a redundancy circuit. SOLUTION: Diffusion regions and gates are alternately formed in column switch circuits. Transistors to be functioned as a switch include a gate, a source, and a drain formed by the diffusion regions at arranged both the sides of the gate. The mutually adjacent transistors have the common diffusion region. One of the source and drain of each transistor is directly connected to a real bit line or a redundant bit line. The other one of the source and drain of each transistor is connected to one of data lines. Accordingly, the real bit line is changed-over into the redundant bit line only by the column switch circuit, that is, the relief of a defect is performed only by the column switch circuit. Consequently, the area of the redundancy circuit is reduced and the size of the chip is reduced in the semiconductor memory. COPYRIGHT: (C)2007,JPO&INPIT
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