发明名称 Substrate processing and method of manufacturing device
摘要 A substrate processor enables realization of a proper process by combining advantages of a remote plasma and a plasma generated in an entire processing chamber. The substrate processor includes a conductive member ( 10 ) which is installed surrounding a processing space ( 1 ) and grounded to the earth and a pair of electrodes ( 4 ) installed inside the conductive member ( 10 ). A primary coil of an insularing transformer ( 7 ) is connected to a high-frequency power supply unit ( 14 ) and a secondary coil is connected to the electrodes ( 4 ). A switch ( 13 ) is connected to the connection line connecting the secondary coil to the electrodes ( 4 ). By setting up/cutting off the connection of the line to the earth with use of the switch ( 13 ), the region where the plasma is generated in the processing space ( 1 ) can be changed.
申请公布号 US2006260544(A1) 申请公布日期 2006.11.23
申请号 US20060547320 申请日期 2006.07.05
申请人 HITACHI KOKUSAI ELECTRIC INC. 发明人 TOYODA KAZUYUKI;SHIMA NOBUHITO;ISHIMARU NOBUO;KONNO YOSHIKAZU;TAKEBAYASHI MOTONARI;NODA TAKAAKI;MIZUNO NORIKAZU
分类号 H01L21/44;C23C16/00;C23C16/50;H01F19/08;H01J37/32;H01L21/00 主分类号 H01L21/44
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