发明名称 |
Photoresist, photolithography method using the same, and method for producing photoresist |
摘要 |
There is provided a positive photoresist for near-field exposure excellent in light utilization efficiency even with small layer thickness of the photoresist layer for image formation, and allowing for reduced pattern edge roughness, and a photolithography method including a step of exposing by the near-field exposure the photoresist layer for image formation made thereof. In a positive photoresist containing an alkali-soluble novolak resin and a quinone diazide compound, the film thickness of the photoresist at the time of exposure is not larger than 100 nm, and the absorption coefficient of the photoresist alpha (mum<SUP>-1</SUP>) for the exposure light is such that 0.5<=alpha<=7.
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申请公布号 |
US2006263722(A1) |
申请公布日期 |
2006.11.23 |
申请号 |
US20060439983 |
申请日期 |
2006.05.25 |
申请人 |
CANON KABUSHIKI KAISHA |
发明人 |
YAMAGUCHI TAKAKO;INAO YASUHISA |
分类号 |
G03C1/00;G03F7/022;G03F1/14;G03F7/023;G03F7/20;G03F7/26;H01L21/027 |
主分类号 |
G03C1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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