| 发明名称 |
SUBSTRATE PROCESSING METHOD AND FABRICATION METHOD FOR SEMICONDUCTOR DEVICE |
| 摘要 |
<p>A substrate treating method which exposes a semiconductor-formed, electronic device-use substrate to hydrogen radicals (including heavy hydrogen radicals), wherein the hydrogen radicals are excited by plasma formed by irradiating a plane antenna with a microwave.</p> |
| 申请公布号 |
KR20060118620(A) |
申请公布日期 |
2006.11.23 |
| 申请号 |
KR20067021979 |
申请日期 |
2006.10.23 |
| 申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
SUGAWARA TAKUYA;MATSUYAMA SEIJI;SASAKI MASARU |
| 分类号 |
H01L21/324;H01L21/28;H01L21/30;H01L21/8242;H01L29/51;H01L29/78 |
主分类号 |
H01L21/324 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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