发明名称 RECEIVER USING VERTICAL BIPOLAR JUNCTION TRANSISTOR WHICH IS EMBODIED IN DEEP N-WELL CMOS TECHNOLOGY
摘要 A receiver using a vertical BJT(Bipolar Junction Transistor) realized by a deep n-well CMOS(Complementary Metal Oxide Semiconductor) is provided to reduce I/f noise, consequently linearity is improved while mismatch between I(In-phase) and Q(Quadrature) channels is solved. An input unit(210) amplifies a small input signal so as to have little noise deterioration, and outputs an output signal. A converter(220) converts the output signal into the first and second differential signals without distortion, and outputs the converted signals. The first and second differential signals are cross-coupled together in a transmitter(230), and the cross-coupled signals are outputted from the transmitter(230). A mixer unit(240) consists of the first mixer stage(241) for mixing the first differential signal with I and Q local oscillation signals, and the second mixer stage(242) for mixing the second differential signal with the I and Q local oscillation signals.
申请公布号 KR100650329(B1) 申请公布日期 2006.11.21
申请号 KR20050105171 申请日期 2005.11.04
申请人 KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY 发明人 NAM, IL KU;LEE, KWY RO;LEE, JOON HEE
分类号 H04B1/06;H04B1/16 主分类号 H04B1/06
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