发明名称 |
RECEIVER USING VERTICAL BIPOLAR JUNCTION TRANSISTOR WHICH IS EMBODIED IN DEEP N-WELL CMOS TECHNOLOGY |
摘要 |
A receiver using a vertical BJT(Bipolar Junction Transistor) realized by a deep n-well CMOS(Complementary Metal Oxide Semiconductor) is provided to reduce I/f noise, consequently linearity is improved while mismatch between I(In-phase) and Q(Quadrature) channels is solved. An input unit(210) amplifies a small input signal so as to have little noise deterioration, and outputs an output signal. A converter(220) converts the output signal into the first and second differential signals without distortion, and outputs the converted signals. The first and second differential signals are cross-coupled together in a transmitter(230), and the cross-coupled signals are outputted from the transmitter(230). A mixer unit(240) consists of the first mixer stage(241) for mixing the first differential signal with I and Q local oscillation signals, and the second mixer stage(242) for mixing the second differential signal with the I and Q local oscillation signals.
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申请公布号 |
KR100650329(B1) |
申请公布日期 |
2006.11.21 |
申请号 |
KR20050105171 |
申请日期 |
2005.11.04 |
申请人 |
KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY |
发明人 |
NAM, IL KU;LEE, KWY RO;LEE, JOON HEE |
分类号 |
H04B1/06;H04B1/16 |
主分类号 |
H04B1/06 |
代理机构 |
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主权项 |
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地址 |
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