METHOD FOR IN-SITU POLYCRYSTALLINE THIN FILM GROWTH
摘要
A method for in-situ polycrystalline thin film growth is provided to manufacture a large-sized element without a large-sized post-heating process apparatus. A method for in-situ polycrystalline thin film growth includes the steps of: ventilating vacuum inside a process chamber; cleaning a vacuum chamber and a catalyst in the vacuum-ventilated process chamber; inserting a substrate into the cleaned process chamber(S20); spaying a process gas inside the process chamber to which the substrate is inserted; and growing the process gas as the polycrystalline thin film at a surface of the substrate by using a reaction of the catalyst in the process chamber to which the process gas is sprayed.
申请公布号
KR20060117774(A)
申请公布日期
2006.11.17
申请号
KR20050040312
申请日期
2005.05.13
申请人
SAMSUNG SDI CO., LTD.
发明人
KIM, HAN KI;KIM, MYOUNG SOO;HUH, MYUNG SOO;JEONG, SEOK HEON;KANG, HEE CHEOL