发明名称 Integrated circuit comprising a photodiode of the floating substrate type and corresponding fabrication process
摘要 An integrated circuit includes at least one photodiode associated with a read transistor. The photodiode is formed from a stack of three semiconductor layers comprising a buried layer, an floating substrate layer and an upper layer. The drain region and/or the source region of the transistor are incorporated within the upper layer. The buried layer is electrically isolated from the upper layer so as to allow the buried layer to be biased independently of the upper layer.
申请公布号 US2006255371(A1) 申请公布日期 2006.11.16
申请号 US20060432675 申请日期 2006.05.10
申请人 STMICROELECTRONICS S.A. 发明人 ROY FRANCOIS;TOURNIER ARNAUD
分类号 H01L27/148 主分类号 H01L27/148
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