FLASH MEMORY DEVICE AND METHOD OF FABRICATING THE SAME

摘要

A flash memory device is provided to remarkably increase integration of a semiconductor device by making channel regions of two transistors share one semiconductor pattern and by making source/drain electrodes of two or four transistors share one impurity region. An active pattern is disposed in a predetermined region of a semiconductor substrate(100), composed of channel regions and connection regions disposed between the channel regions. Isolation layer patterns are disposed at both sides of the active pattern. Gate patterns(135) are disposed between the isolation layer pattern and the channel region. A gate insulation layer pattern is interposed between the semiconductor substrate and the gate pattern and between the gate pattern and the active pattern. A tunnel insulation layer is disposed between the gate pattern and the semiconductor substrate, thinner than the gate insulation layer surrounded by the gate insulation layer pattern. Source/drain electrodes are formed in the connection regions. Lower interconnections are disposed in parallel with the active patterns to interconnect the gate patterns. The gate insulation layer pattern is made of at least one selected from a silicon oxide layer, a silicon nitride layer and a high dielectric layer.