| 摘要 |
PROBLEM TO BE SOLVED: To provide a compound semiconductor switch circuit device in which leakage of high frequency signal is suppressed and degradation in strain characteristics is prevented. SOLUTION: A bend is formed by extending one end of a gate electrode and arranged between a first source electrode 13 and a second source electrode and a drain interconnect line or between a first drain electrode and a second drain electrode and a source interconnect line. Since the gate electrode of the off side FET has GND potential as high frequency signal, leakage of high frequency signal is prevented between drain and source. The bends are extended from the gate electrodes on the opposite sides while facing each other to the vicinity of the distal end of one source electrode (drain electrode) and arranged in zigzag. A bend is provided by extending one end of the gate electrode around the source electrode (drain electrode) and extended to the vicinity of the gate interconnect line. Since resist removing liquid enters between adjacent gate electrodes sufficiently, lift-off is facilitated. COPYRIGHT: (C)2007,JPO&INPIT
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