METHOD AND APPARATUS FOR MULTI-TARGET SPUTTERING FIELD OF THE INVENTION

摘要

Sequential sputtered film deposition of distinct materials on a workpiece is obtained with discrete targets composed of such distinct materials disposed on separate area portions of a common cathode/heatsink. Sputtering without cross contamination of the deposited films is enabled during an interval of relative motion between the target and workpiece or in an indexed static relative disposition, wherein the workpiece projection is entirely proximate one such portion to deposit the respective layer.