Method for producing a semiconductor component

摘要

A method for producing a semiconductor component, in which a semiconductor layer ( 2 ) is separated from a substrate ( 1 ) by irradiation with laser pulses ( 6 ), the pulse duration of the laser pulses ( 6 ) being less than or equal to 10 ns. The laser pulses ( 6 ) have a spatial beam profile ( 7 ) with a flank slope chosen to be gentle enough to prevent cracks in the semiconductor layer ( 2 ) that arise as a result of thermally induced lateral stresses, during the separation of semiconductor layer ( 2 ) and substrate ( 1 ).