发明名称 |
Method of manufacture of semiconductor device and conductive compositions used therein |
摘要 |
<p>The present invention is directed to a thick film conductive composition comprising: (a) electrically conductive silver powder; (b) Mn-containing additive; (c) glass frit wherein said glass frit has a softening point in the range of 300 to 600°C.; dispersed in (d) organic medium. The present invention is further directed to a semiconductor device and a method of manufacturing a semiconductor device from a structural element composed of a semiconductor having a p-n junction and an insulating film formed on a main surface of the semiconductor comprising the steps of (a) applying onto said insulating film the thick film composition of the invention; and (b) firing said semiconductor, insulating film and thick film composition to form an electrode.</p> |
申请公布号 |
AU2006201555(A1) |
申请公布日期 |
2006.11.02 |
申请号 |
AU20060201555 |
申请日期 |
2006.04.12 |
申请人 |
E. I. DU PONT DE NEMOURS AND COMPANY |
发明人 |
YUELI L. WANG;RICHARD JOHN SHEFFIELD YOUNG;ALAN FREDERICK CARROLL;KENNETH WARREN HANG |
分类号 |
H01L21/283;H01B1/22;H01L31/04 |
主分类号 |
H01L21/283 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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