MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE

摘要

A method for manufacturing a semiconductor device is provided to prevent damage of bit line due to chemicals and to increase misalignment margin when forming a storage node contact by using an insulating spacer. A gate insulating layer(12) is formed on a substrate(10). A gate electrode(14) overlapped with a hard mask pattern is formed on the gate insulating layer. A spacer(18) is formed at both sidewalls of the gate electrode and the hard mask pattern. A first interlayer dielectric(20) having a landing plug(22) and a second interlayer dielectric(24) are sequentially formed on the resultant structure. A contact hole is formed by etching the second interlayer dielectric using a bit line contact mask. A spacer insulating layer(26) and a buffer insulating layer(28) are sequentially formed to fill the contact hole. By removing the buffer and the spacer insulating layers using the bit line contact mask, a contact hole having an insulating spacer is then formed. A bit line contact hole(30) is filled in the contact hole.