| 摘要 |
A method for manufacturing a semiconductor and the semiconductor manufacturing apparatus thereof are provided to process one pair of semiconductor substrate in one reaction chamber by injecting a reaction gas to the pair of semiconductor substrates faced vertically. In a method for manufacturing a semiconductor device, a semiconductor substrate of a large diameter is laid on a boat(10) and then put into a reaction chamber(16), and deposited by reaction gas in the reaction chamber of high temperature using a heater(14). A pair of semiconductor substrates of the large diameter are loaded to a holder unit(12) of the boat and the reaction gas flows between the substrates faced vertically, at this time heating is performed using the heater.
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