| 摘要 |
In a nonvolatile memory device, wherein, for example, data "1" is electrically charged, while data "0" is not electrically charged, and memory cells susceptible to charge loss are included, when data in the array 10 is count value of "1">count value of "0", write data is converted to thereby make "1" to "0" and "0" to "1", leading to number of "1"<number of "0", so that a statistical reliability of the data in the array 10 is improved. The data, which is converted and written, is converted in its polarity prior to the conversion when it is read.
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