| 摘要 |
In a method for fabricating a nonvolatile memory element a substrate is provided, a nanomask structure is fabricated on the substrate and a self-assembled monolayer of an organic memory molecule is grown on the substrate on a region not covered by the nanomask structure. A surface of the substrate is patterned by means of an electrode beam in order to form regions with organic memory molecules and regions without organic memory molecules and a top contact is applied to the monolayer formed from the organic memory molecules and the nanomask.
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