| 摘要 |
A method for forming a storage node contact in a semiconductor memory device is provided to prevent resistance from increasing abnormally by avoiding generation of a void in forming a storage contact. A landing plug contact is formed on a semiconductor substrate(200) having a transistor, connected to an impurity region of the transistor. An interlayer dielectric is formed on the resultant structure. A part of the interlayer dielectric is removed to form a contact hole which penetrates the interlayer dielectric and exposes a partial surface of the landing plug contact. The inside of the contact hole is filled with a material including a transition element of a VIII group to an X group by an ALD(atomic layer deposition) method, a PVD(physical vapor deposition) method, a CVD(chemical vapor deposition) method, a PECVD(plasma enhanced chemical vapor deposition) method or a LPCVD(low pressure chemical vapor deposition) method, so that a storage node contact is formed.
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