| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide iridium oxide powder excellent in dispersibility and ensuring good electrical properties with respect to a temperature coefficient of resistance, etc., as lead-free conductive powder substitutable for lead ruthenate powder for a thick film resistor, and to provide an industrially inexpensive method for manufacturing the iridium oxide powder. <P>SOLUTION: The iridium oxide powder having an average particle diameter of 40-100 nm and comprising a single phase is obtained by roasting ammonium hexachloroiridate (IV) or potassium hexachloroiridate (IV) at 600-1,050°C in an oxidizing atmosphere. The particle diameter of the iridium oxide powder obtained by the roasting can be regulated by heat treatment within the temperature range of 400-900°C. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
