| 摘要 |
A method for producing a semiconductor device employing an SiC semiconductor substrate (1) in which the SiC semiconductor substrate (1) is mounted on a susceptor (23), a C heating member (3) made of carbon is arranged on the surface of the SiC semiconductor substrate (1), and the susceptor (23) and the C heating member (3) are heated at high temperature, thus forming an impurity region in the surface of the SiC semiconductor substrate (1) by annealing. |
