发明名称 Wordline enable circuit in semiconductor memory device and method thereof
摘要 There is provided a wordline enable circuit and its method for reducing power consumption by controlling a wordline select signal in a self-refresh mode. The wordline enable circuit includes a wordline control signal generating unit for outputting an untoggled wordline control signal while a unit wordline block is enabled in a self-refresh mode; a wordline enable signal generating unit for generating a wordline enable control signal, controlled by the untoggled wordline control signal and a toggled address signal, and a first to an n-th wordline enable power supply signals; and a wordline block enable unit for enabling each wordline, controlled by the wordline enable control signal and the first to the n-th wordline enable power supply signals.
申请公布号 US2006215475(A1) 申请公布日期 2006.09.28
申请号 US20050320967 申请日期 2005.12.30
申请人 HYNIX SEMICONDUCTOR INC. 发明人 LEE JONG-WON;CHU SHIN-HO
分类号 G11C7/00 主分类号 G11C7/00
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