| 摘要 |
A method of production of a multilayer ceramic electronic device having dielectric layers with an interlayer thickness of 5 µm or less and internal electrode layers including a base metal, including the steps of firing, then annealing a stack comprised of a dielectric layer paste and an internal electrode layer paste including a base metal alternately arranged in 100 layers or more under a reducing atmosphere, treating the annealed stack by first heat treatment under a strong reducing atmosphere of an oxygen partial pressure P3 of over 2.9 x 10 -39 Pa to less than 6.7 x 10 -24 Pa at a holding temperature T3 of over 300°C to less than 600°C. The stack after the first heat treatment is treated by second heat treatment under an atmosphere of an oxygen partial pressure P4 of over 1.9 x 10 -7 Pa to less than 4.1 x 10 -3 Pa at a holding temperature T4 of over 500°C to less than 1000°C. |
