发明名称 |
Method for forming an SOI structure with improved carrier mobility and ESD protection |
摘要 |
A semiconductor device and method for forming the same including improved electrostatic discharge protection for advanced semiconductor devices, the semiconductor device including providing semiconductor substrate having a pre-selected surface orientation and crystal direction; an insulator layer overlying the semiconductor substrate; a first semiconductor active region overlying the insulator layer having a first surface orientation selected from the group consisting of <100> and <110>; a second semiconductor active region extending through a thickness portion of the insulator layer having a second surface orientation selected from the group consisting of <110> and <100> different from the first surface orientation; wherein MOS devices including a first MOS device of a first conduction type is disposed on the first semiconductor active region and a second MOS device of a second conduction type is disposed on the second semiconductor active region.
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申请公布号 |
US2006214226(A1) |
申请公布日期 |
2006.09.28 |
申请号 |
US20050089405 |
申请日期 |
2005.03.23 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
CHEN HUNG-WEI;TSAO HSUN-CHIH;CHEN KUANG-HSIN;LEE DI-HONG |
分类号 |
H01L29/04;H01L21/84 |
主分类号 |
H01L29/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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