METHOD OF MANUFACTURING MOS TRANSISTOR HAVING MULTI-CHANNEL

摘要

A method for manufacturing a MOS transistor having multi-channel is provided to secure uniform channel length for improving mobility property and to reduce the manufacturing process by using an active mask instead of an etch-stop barrier. A first material layer and a second material layer(115) are stacked on a semiconductor substrate(100) having different etch-selectivity. An active mask(135a) is formed on the resultant structure. An active region is restricted by the active mask. A sidewall of the resultant structure is exposed, at this time the active mask remains. A plurality of tunnels are formed by etching selectively the first material layer through the exposed resultant structure. The active mask is removed. A gate electrode is formed on the active region to fill the tunnels.