A METHOD FOR MAKING A SEMICONDUCTOR DEVICE WITH A HIGH-K GATE DIELECTRIC AND A METAL GATE ELECTRODE
摘要
A method for making a semiconductor device is described. That method comprises adding nitrogen to a silicon dioxide layer to form a nitrided silicon dioxide layer on a substrate. After forming a sacrificial layer on the nitrided silicon dioxide layer, the sacrificial layer is removed to generate a trench. A high-k gate dielectric layer is formed on the nitrided silicon dioxide layer within the trench, and a metal gate electrode is formed on the high-k gate dielectric layer.
申请公布号
WO2006063269(A3)
申请公布日期
2006.09.21
申请号
WO2005US44696
申请日期
2005.12.07
申请人
INTEL CORPORATION;BRASK, JUSTIN;PAE, SANGWOO;KAVALIEROS, JACK;METZ, MATTHEW;DOCZY, MARK;DATTA, SUMAN;CHAU, ROBERT;MAIZ, JOSE
发明人
BRASK, JUSTIN;PAE, SANGWOO;KAVALIEROS, JACK;METZ, MATTHEW;DOCZY, MARK;DATTA, SUMAN;CHAU, ROBERT;MAIZ, JOSE