| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a manufacturing method for a surface acoustic wave device, having a structure where an insulating layer is formed to cover an IDT electrode, having a fully large reflection coefficient for IDT, and is capable of suppressing deterioration in characteristics due to undesired ripples. <P>SOLUTION: In the surface acoustic wave device, a first insulating layer 2 is formed over the whole surface of a LiTaO<SB>3</SB>substrate as a piezoelectric substrate. The first insulating layer, at a part where an IDT electrode is formed, is removed by using a resist pattern 3 for forming the IDT electrode. An electrode film, made of a metal having a density higher than that of Al or of an alloy consisting essentially of the metal, is formed in a region where the first insulating electrode layer is removed so as to form an IDT electrode 4A. The resist, remaining on the first insulating layer, is removed. A second insulating layer 6 is formed so as to cover the first insulating layer 2 and the IDT electrode 4A. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
