发明名称 |
Finfet-type semiconductor device and method for fabricating the same |
摘要 |
A semiconductor device includes: a semiconductor substrate in which a trench is formed; a source region and a drain region each of which is buried in the trench and contains an impurity of the same conductive type; a semiconductor FIN buried in the trench and provided between the source and drain regions; a gate insulating film provided on a side surface of the semiconductor FIN as well as the upper surface of the semiconductor FIN; and a gate electrode formed on the gate insulating film.
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申请公布号 |
US2006208300(A1) |
申请公布日期 |
2006.09.21 |
申请号 |
US20050549291 |
申请日期 |
2005.09.14 |
申请人 |
IWANAGA JUNKO;TAKAGI TAKESHI;KANZAWA YOSHIHIKO;SORADA HARUYUKI;SAITOH TOHRU;KAWASHIMA TAKAHIRO |
发明人 |
IWANAGA JUNKO;TAKAGI TAKESHI;KANZAWA YOSHIHIKO;SORADA HARUYUKI;SAITOH TOHRU;KAWASHIMA TAKAHIRO |
分类号 |
H01L27/108;H01L21/336;H01L29/423;H01L29/786 |
主分类号 |
H01L27/108 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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