| 摘要 |
PROBLEM TO BE SOLVED: To provide an organic ferroelectric memory manufactured by a simple process, and to provide its manufacturing method. SOLUTION: The organic ferroelectric memory 100 comprises a thin film transistor 90 of simple matrix type structure having an organic semiconductor layer 40, an interlayer insulation film 70 formed above the thin film transistor 40, a ferroelectric capacitor 56 formed above the interlayer insulation film 70 while having a lower electrode 52, an organic ferroelectric layer 50 and an upper electrode 54, and a contact layer 62 penetrating the interlayer insulation film 70 and connecting the ferroelectric capacitor 56 and the thin film transistor 90 electrically. COPYRIGHT: (C)2006,JPO&NCIPI
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