SIGNAL FETCH STRUCTURE OF SEMICONDUCTOR MICRO ELECTRO-MECHANICAL DEVICE

摘要

PROBLEM TO BE SOLVED: To appropriately generate an electrical signal to certainly fetch and to reduce the manufacturing cost, by using a conductive low-melting-point material melting when an insulating substrate and the semiconductor plate are anode-joined to a part of a fetch route of the electrical signal to the outside, in a signal fetch structure of a semiconductor micro electro-mechanical device. SOLUTION: The semiconductor micro electro-mechanical device is formed by anode-joining the insulating substrate 2 to the upper surface of the semiconductor plate 1. An electrical signal from a fixed electrode 6 formed in the insulating substrate 2 is fetched from a conductive drawer film 4a disposed in a through hole 2a via a conductive pad 7a connected to the fixed electrode 6 and a low-melting-point material film 5 connected to the conductive pad 7a. The semiconductor plate 1 is anode-joined to the insulating substrate 2 in a state where the low-melting-point material film 5 is formed in the insulating substrate 2, and the low-melting-point material film 5 is molten by the heat of the anode-joining to be certainly connected to the conductive pad 7a, so that the conductive reliability is improved. COPYRIGHT: (C)2006,JPO&NCIPI