发明名称 |
Method of forming capacitor over bitline contact |
摘要 |
A method of forming a contact for a semiconductor device by forming a storage node contact in a semiconductor substrate having a first pad and a second pad formed thereon. The storage node contact is connected to the second pad. A bit line electrically insulated from the storage node contact by a spacer and electrically connected to the first pad.
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申请公布号 |
US7109080(B2) |
申请公布日期 |
2006.09.19 |
申请号 |
US20050033447 |
申请日期 |
2005.01.12 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE YONG-WOO;PARK JONG-CHUL;KWON O-IK;JEONG SANG-SUP |
分类号 |
H01L21/28;H01L21/8242;H01L21/3205;H01L21/4763 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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