发明名称 |
Method of forming a semiconductor device having a diffusion barrier stack and structure thereof |
摘要 |
A diffusion barrier stack is formed by forming a layer comprising a metal over a conductor that includes copper; and forming a first dielectric layer over the layer, wherein the dielectric layer is of a thickness that alone it can not serve as a diffusion barrier layer to the conductor and the first dielectric layer prevents oxidation of the layer. In one embodiment, the diffusion barrier stack includes two layers; the first layer is a conductive layer and the second layer is a dielectric layer. The diffusion barrier stack minimizes electromigration and copper diffusion from the conductor.
|
申请公布号 |
US2006202339(A1) |
申请公布日期 |
2006.09.14 |
申请号 |
US20050078236 |
申请日期 |
2005.03.11 |
申请人 |
MICHAELSON LYNNE M;ACOSTA EDWARD;CHATTERJEE RITWIK;FILIPIAK STANLEY M;GARCIA SAM S;MATHEW VARUGHESE |
发明人 |
MICHAELSON LYNNE M.;ACOSTA EDWARD;CHATTERJEE RITWIK;FILIPIAK STANLEY M.;GARCIA SAM S.;MATHEW VARUGHESE |
分类号 |
H01L21/4763 |
主分类号 |
H01L21/4763 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|