发明名称 |
Method and apparatus for forming a thin semiconductor film, method and apparatus for producing a semiconductor device, and electro-optical apparatus |
摘要 |
A method is disclosed for forming high-quality high-crystallinity polycrystalline or monocrystalline thin semiconductor film. The method is capable of forming such a semiconductor film over a large area at low cost. An apparatus for practicing the method is also disclosed. To form a high-crystallinity large-grain polycrystalline film or monocrystalline thin semiconductor film on a substrate, or to produce a semiconductor device including a high-crystallinity large-grain polycrystalline film or monocrystalline thin semiconductor film disposed on a substrate, a low-crystal-quality thin semiconductor film is first formed on the substrate, and then focused-light annealing is performed on the low-crystal-quality thin semiconductor film thereby melting or semi-melting the low-crystal-quality thin semiconductor film. The focused-light annealing allows enhancement of crystallization that occurs when the melted low-crystal-quality thin semiconductor film is cooled, and thus the low-crystal-quality thin semiconductor film is converted into a high-quality polycrystalline (or monocrystalline) thin semiconductor film.
|
申请公布号 |
US7098085(B2) |
申请公布日期 |
2006.08.29 |
申请号 |
US20020075774 |
申请日期 |
2002.02.14 |
申请人 |
SONY CORPORATION |
发明人 |
YAMANAKA HIDEO;YAMOTO HISAYOSHI |
分类号 |
G02F1/1368;H01L21/00;C23C16/44;G09F9/30;H01J9/02;H01L21/20;H01L21/205;H01L21/26;H01L21/336;H01L21/461;H01L21/77;H01L21/84;H01L27/12;H01L29/786;H01L31/04 |
主分类号 |
G02F1/1368 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|