METHODS OF FABRICATING A MOS TRANSISTOR,申请号KR20050012841-传众专利搜索

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发明名称	METHODS OF FABRICATING A MOS TRANSISTOR
摘要
申请公布号	KR20060091600(A)	申请公布日期	2006.08.21
申请号	KR20050012841	申请日期	2005.02.16
申请人	SAMSUNG ELECTRONICS CO., LTD.	发明人	PARK, SANG JINE;CHANG, CHONG KWANG
分类号	H01L21/336	主分类号	H01L21/336
代理机构		代理人
主权项
地址

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