| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which can effect the area reduction of a semiconductor device and a high integration, etc. while the reduction of an impedance is intended. SOLUTION: The example of one configuration of the semiconductor device includes a semiconductor substrate 1, and signal wiring 3. The signal wiring 3 is arranged above the semiconductor substrate 1. Moreover, the silicide formation of the part of the semiconductor substrate 1 which counters the signal wiring 3 is performed according to the profile of the signal wiring 3 (that is, a silicide part 1a is formed). COPYRIGHT: (C)2006,JPO&NCIPI
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