| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a MOS-type field effect transistor for increasing speed and reducing power consumption by using a thin-film SOI structure. SOLUTION: The method for manufacturing the MOS-type field effect transistor formed on a semiconductor substrate having a channel layer on an embedded oxide film comprises a process for forming a gate electrode 3 on the semiconductor substrate via a gate oxide film; a process for forming a first sidewall 16 for covering the sidewall of the gate electrode 3; a process for forming a box oxide film 5 by etching the embedded oxide film; and a process for forming a second sidewall 6 for covering the sidewall of the box oxide film 5. The second sidewall 6 is formed so that it is extended to the sidewall of the box oxide film 5 and is stretched downward. COPYRIGHT: (C)2006,JPO&NCIPI
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