| 摘要 |
PROBLEM TO BE SOLVED: To obtain a silicon single crystal containing oxygen in a high concentration by sufficiently dissolving oxygen in a silicon melt when the silicon single crystal is pulled from the silicon melt. SOLUTION: After arranging a plurality of quartz rings 31, 32 on the inner bottom part of a quartz crucible 13 so that the center of each ring coincides with the rotation center A of the quartz crucible, the silicon melt 12 is stored in the quartz crucible, and then the silicon single crystal 24 is pulled. When the plurality of quartz rings are two rings, the diameter of the circular cross section is defined as d, and the diameter of the silicon single crystal 24 to be pulled is defined as D, the outer diameter M of the inside quartz ring 31 is set to be <D and≥(D-d), and the inner diameter N of the outside quartz ring 32 is set to be≥D and <(D+d). When the plurality of quartz rings are three rings, the outer diameter of the intermediate quartz ring is set to be <D and≥(D-d), the outer diameter of the inside quartz ring is set to be <(D-3d) and≥(D-5d), and the inner diameter of the outside quartz ring is set to be≥D and <(D+d). The quartz rings comprise synthetic quartz and the surface of each ring is formed in porous. COPYRIGHT: (C)2006,JPO&NCIPI
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