Improvements in or relating to semiconductor devices

摘要

A layer of a nitride of silicon is provided over at least that part of the surface of a semi-conductor body where a P-N junction emerges. The layer is provided by deposition from a gaseous atmosphere comprising a mixture of nitrogen and hydrogen bubbled through silicon tetrachloride, or a mixture of a silicon hydride with a nitrogen hydride or a halogen compound of ammonia, or disilylamine. Hydrogen or nert gas may be used as a carrier, and deposition may be effected by heating the semi-conductor body or by means of an R.F.-initiated electric discharge.