发明名称 |
ATTRACTION METHOD, RELEASING METHOD, PLASMA PROCESSING METHOD, ELECTROSTATIC CHUCK, AND PLASMA PROCESSING APPARATUS |
摘要 |
PROBLEM TO BE SOLVED: To provide an electrostatic chuck improved in temporal response of attraction force. SOLUTION: When attracting a wafer 6 to a susceptor 5 of an electrostatic chuck, attraction force is rapidly increased to yield desired attraction force by applying higher voltage than predetermined voltage where the desired attraction force is yielded to an electrode 7. Then, the voltage is controlled to the predetermined voltage to yield desired attraction force more rapidly than prior art. When releasing the wafer, the attraction force is rapidly decreased by applying opposite voltage in a sign of positive or negative to the application voltage at the time of the attraction. Thereafter, the voltage application is interrupted or voltage is applied to the electrostatic chuck to provide the same potential as that of the wafer 6 for example as the voltage control. A releasing work is thus achieved more rapidly than prior art. COPYRIGHT: (C)2006,JPO&NCIPI |
申请公布号 |
JP2006202939(A) |
申请公布日期 |
2006.08.03 |
申请号 |
JP20050012343 |
申请日期 |
2005.01.20 |
申请人 |
MITSUBISHI HEAVY IND LTD |
发明人 |
KAFUKU HIDENARU;SHIMAZU TADASHI;NISHIMORI TOSHIHIKO;YANAGIDA HISASHI |
分类号 |
H01L21/683;H01L21/205;H01L21/3065;H02N13/00 |
主分类号 |
H01L21/683 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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