| 摘要 |
Methods of etching a carbon-rich layer on organic photoresist overlying an inorganic layer can utilize a process gas including C<SUB>x</SUB>H<SUB>y</SUB>F<SUB>z</SUB>, where y>=x and z>=0, and one or more optional components to generate a plasma effective to etch the carbon-rich layer with low removal of the inorganic layer. The carbon-rich layer can be removed in the same processing chamber, or alternatively can be removed in a different processing chamber, as used to remove the bulk photoresist.
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