发明名称 SEMICONDUCTOR DEVICE INCLUDING THIN-LINE MOSFET
摘要 PROBLEM TO BE SOLVED: To efficiently apply mechanical stress toward a channel region from source and drain regions in a thin-line element region by adopting a simple configuration, and to improve carrier mobility. SOLUTION: There are provided: the thin-line element region, where the thin-line source region 8 and the thin-line drain region 9 are arranged while sandwiching a thin-line channel region 4; and a stress generation film 11 or 12 for covering at least the side of each of the thin-line source 8 and thin-line drain region 9 and for generating compressive or tensile stress. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006196757(A) 申请公布日期 2006.07.27
申请号 JP20050007821 申请日期 2005.01.14
申请人 FUJITSU LTD 发明人 FUKUDA MASATOSHI
分类号 H01L29/786;H01L21/28;H01L21/768;H01L29/417;H01L29/423;H01L29/49 主分类号 H01L29/786
代理机构 代理人
主权项
地址
您可能感兴趣的专利