MICRO-FEATURE FILL PROCESS AND APPARATUS USING HEXACHLORODISILANE OR OTHER CHLORINE-CONTAINING SILICON PRECURSOR

摘要

A method is provided for depositing a silicon-containing film in a micro-feature on a substrate by a low pressure deposition process in a processing system. A silicon-containing film can be formed in a micro-feature by providing a substrate in a process chamber of a processing system, and exposing a hexachiorodisilane (HCD) process gas to the substrate. A processing tool containing a processing system for forming a silicon-containing film in a micro-feature using a silicon and chlorine-containing gas such as a HCD process gas is provided. Alternatively, the micro-feature can be exposed to DCS, SiCl₄, and SiHCI₃ gases. Alternatively, the micro-feature can be exposed to (SiH₄ +HCI).