| 摘要 |
<p>A microelectronic structure comprising a channel dimensioned such that tunneling is a significant transport mode for charge carriers. The charge carriers have a coherence length depending on the channel material and the carrier type and a wavelength. A potential varying spatially along the length of the channel is applied, the potential having a variation scale or period which is below the wavelength of the charge carriers in the first substance. The channel is typically shorter than the coherence length, which is what causes the tunneling. The potential thereby influences tunneling of the charge carriers through the channel, and can be used to overcome leakage or off current problems due to tunneling that start to appear at these small scales. A very large scale integration circuit containing such a structure is also described.</p> |
