| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a high performance surface luminescence semiconductor device that has good characteristics in polarization mode control and mass productivity even at fabrication on regular boards such as plane direction (100) plane. <P>SOLUTION: This semiconductor device comprises a semiconductor active layer 4 with a luminescence area, a first semiconductor multi-layer mirror reflector 6 and a second semiconductor multi-layer mirror reflector 2 which form a vertical resonator, electrodes 9 and 10 for flowing current into the semiconductor active layer, first oxidized layers 32 and 30 with Al which are formed near the semiconductor active layer, a current narrowed portion where the side of the first oxide layer is oxidized but the center is not oxidized, a first concave 12a with a channel depth at least up to the top surface of the first oxidized layer, a second concave 12b penetrating the first oxidized layer, a mesa 100 surrounded by the first and second concaves, and an insulated film 200 embedded at least in the second concave of the first and second concaves. In addition, the first oxidized layer has different size of oxidized areas in directions where the first and second concave have been created. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
