发明名称 Inductive and capacitvie elements for semiconductor techinologies with minimum pattern density requirements
摘要 The present invention provides a semiconductor device comprising a plurality of layers, the semiconductor device comprising:-a substrate having a first major surface,-an inductive element fabricated on the first major surface of the substrate, the inductive element comprising at least one conductive line, and-a plurality of tilling structures in at least one layer, wherein the plurality of tilling structures are electrically connected together and are arranged in a geometrical pattern so as to substantially inhibit an inducement of an image current in the tilling structures by a current in the inductive element. It is an advantage of the above semiconductor device that, by using such tilling structures, an inductive element with improved quality factor is obtained. The present invention also provides a method for providing an inductive element in a semiconductor device comprising a plurality of layers.
申请公布号 US2006163692(A1) 申请公布日期 2006.07.27
申请号 US20040564582 申请日期 2004.07.15
申请人 DETECHEVERRY CELINE J;VAN NOORT WIBO D 发明人 DETECHEVERRY CELINE J.;VAN NOORT WIBO D.
分类号 H01L29/00;H01F17/00;H01L23/522;H01L27/08 主分类号 H01L29/00
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