Semiconductor device with a protection against ESD

摘要

A semiconductor device comprises an active layer of a first conductive type; a base layer of a second conductive type selectively formed on a surface region of said active layer; a source layer of the first conductive type selectively formed on a surface region of said base layer; an anode layer of the second conductive type selectively formed on a surface region of the active layer, said anode layer being spaced from said base layer; a drain layer of the first conductive type formed on a surface region between said base layer and said anode layer; a resistive layer of the first conductive type formed on a surface region between said base layer and said drain layer; and a gate electrode formed above a region of said base layer between said source layer and said active layer, a gate insulating film being disposed between said base layer and said gate electrode, wherein a source electrode is formed on the surface of the base layer and the source layer while a drain electrode is formed on the surface of the drain layer and the anode layer.